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| sot-23 plastic-encapsulate transistors 3dk2222a transistor (npn) features y epitaxial planar die construction y complementary pnp type available(mmbt2907a) marking: 1p1 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector power dissipation 225 mw t j junction temperature 150 t stg storage temperature -55to+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 10 a, i e =0 75 v collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =70 v , i e =0 0.01 a collector cut-off current i cex v ce =60v, v be(off) =3v 0.01 a emitter cut-off current i ebo v eb = 3v, i c =0 0.01 a h fe(1) v ce =10v, i c = 150ma 100 300 h fe(2) v ce =10v, i c = 0.1ma 40 dc current gain h fe(3) v ce =10v, i c = 500ma 42 collector-emitter saturation voltage v ce (sat) i c =500 ma, i b = 50ma i c =150 ma, i b =15ma 0.6 0.3 v base-emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma 1.2 v transition frequency f t v ce =20v, i c = 20ma f= 100mhz 300 mhz delay time t d 10 n s rise time t r v cc =30v, v be(off) =-0.5v i c =150ma , i b1 = 15ma 25 n s storage time t s 225 n s fall time t f v cc =30v, i c =150ma i b1 =-i b2 =15ma 60 n s sot-23 1. base 2.emitter 3.collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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